About this product
Advanced CMOS and Beyond-CMOS Device Physics by Prof Dr Adnan Haider Zaidi (PhD Scientist) presents an advanced scientific examination of semiconductor device physics, nanoscale transistor architectures, emerging electronic materials, and the technological challenges shaping the future of integrated circuits.
As conventional semiconductor scaling approaches increasingly complex physical and manufacturing constraints, researchers must investigate new device structures, quantum effects, alternative switching mechanisms, and energy-efficient computing technologies. This book provides a rigorous foundation for understanding these developments through mathematical analysis, physical modelling, comparative evaluation, and reproducible computational methods.
Organized into twelve comprehensive chapters, the book examines semiconductor carrier statistics, electrostatics, quantum confinement, carrier transport, FinFETs, gate-all-around nanosheets, nanowires, contact resistance, interconnect parasitics, device variability, power consumption, thermal effects, and reliability.
Advanced topics include ferroelectric and negative-capacitance transistors, two-dimensional semiconductor materials, tunnel field-effect transistors, spintronics, quantum transport, and emerging beyond-CMOS switching paradigms.
The book also explores technology computer-aided design (TCAD), compact modelling, numerical simulation, experimental validation, semiconductor manufacturing readiness, device economics, and heterogeneous integration.
Special emphasis is placed on distinguishing theoretical predictions from experimentally demonstrated performance. Mathematical derivations, worked examples, conceptual figures, research exercises, and computational demonstrations support a systematic understanding of the physical principles governing advanced semiconductor technologies.
The concluding chapters introduce a comparative research roadmap for beyond-CMOS technologies, examining scientific uncertainties, manufacturing challenges, technology readiness, and potential development pathways for 2026–2036.
Intended readership: Doctoral and postdoctoral researchers, semiconductor scientists, microelectronics engineers, university faculty, advanced engineering students, compact-model developers, and researchers working in semiconductor materials, nanoelectronics, integrated circuits, and emerging computing technologies.
This volume provides a research-oriented foundation for investigating next-generation semiconductor devices and evaluating their potential contributions to future electronic and computing systems.
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